April 2001
FDD3690
100V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
? 22 A, 100 V.
R DS(ON) = 64 m ? @ V GS = 10 V
R DS(ON) = 71 m ? @ V GS = 6 V
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
? Low gate charge (28nC typical)
? Fast Switching
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
D
D
G
D-PAK
S
TO-252
G
(TO-252)
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
S
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
100
± 20
Units
V
V
I D
Continuous Drain Current @T C =25°C
Pulsed
(Note 3)
(Note 1a)
22
75
A
P D
Power Dissipation
@T C =25°C
(Note 3)
60
W
@T A =25°C
@T A =25°C
(Note 1a)
(Note 1b)
3.8
1.6
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +175
° C
Thermal Characteristics
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.5
40
96
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD3690
Device
FDD3690
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
? 2001 Fairchild Semiconductor Corp.
FDD3690 Rev C(W)
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